Influence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell properties
dc.contributor.author | Trusheim, Daniel | |
dc.contributor.author | Schulz-Ruhtenberg, Malte | |
dc.contributor.author | Smeets, M. | |
dc.contributor.author | Das, Jo | |
dc.contributor.author | Wieduwilt, J. | |
dc.date.accessioned | 2021-10-19T19:54:44Z | |
dc.date.available | 2021-10-19T19:54:44Z | |
dc.date.issued | 2011 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19918 | |
dc.source | IIOimport | |
dc.title | Influence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell properties | |
dc.type | Proceedings paper | |
dc.source.peerreview | no | |
dc.source.beginpage | 1623 | |
dc.source.endpage | 1627 | |
dc.source.conference | 26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC | |
dc.source.conferencedate | 5/09/2011 | |
dc.source.conferencelocation | Hamburg Germany | |
imec.availability | Published - imec |
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