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Influence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell properties

dc.contributor.authorTrusheim, Daniel
dc.contributor.authorSchulz-Ruhtenberg, Malte
dc.contributor.authorSmeets, M.
dc.contributor.authorDas, Jo
dc.contributor.authorWieduwilt, J.
dc.date.accessioned2021-10-19T19:54:44Z
dc.date.available2021-10-19T19:54:44Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19918
dc.sourceIIOimport
dc.titleInfluence of ultra-short pulse laser ablation of silicon nitride passivation layers on electronical cell properties
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage1623
dc.source.endpage1627
dc.source.conference26th European Photovoltaic Solar Energy Conference and Exhibition - EU PVSEC
dc.source.conferencedate5/09/2011
dc.source.conferencelocationHamburg Germany
imec.availabilityPublished - imec


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