Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas
dc.contributor.author | Valev, V.K. | |
dc.contributor.author | Vanbel, M.K. | |
dc.contributor.author | Vincent, Benjamin | |
dc.contributor.author | Moshchalkov, V.V. | |
dc.contributor.author | Caymax, Matty | |
dc.contributor.author | Verbiest, T. | |
dc.date.accessioned | 2021-10-19T20:04:03Z | |
dc.date.available | 2021-10-19T20:04:03Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19937 | |
dc.source | IIOimport | |
dc.title | Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas | |
dc.type | Journal article | |
dc.contributor.imecauthor | Vincent, Benjamin | |
dc.contributor.imecauthor | Caymax, Matty | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 12 | |
dc.source.endpage | 14 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 1 | |
dc.source.volume | 32 | |
imec.availability | Published - open access |