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Probing ultra thin Si passivation layers on Ge-substrates

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDouhard, Bastien
dc.contributor.authorDelmotte, Joris
dc.contributor.authorFranquet, Alexis
dc.contributor.authorVincent, Benjamin
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T20:39:53Z
dc.date.available2021-10-19T20:39:53Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20013
dc.sourceIIOimport
dc.titleProbing ultra thin Si passivation layers on Ge-substrates
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.conference18th International Conference on Secondary Ion Mass Spectrometry - SIMS XXVIII
dc.source.conferencedate19/09/2011
dc.source.conferencelocationRiva del Garda Italy
imec.availabilityPublished - open access


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