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Germanium doping for improved silicon substrates and devices

dc.contributor.authorVanhellemont, J.
dc.contributor.authorChen, J.
dc.contributor.authorLauwaert, J.
dc.contributor.authorVrielinck, H.
dc.contributor.authorXu, W.
dc.contributor.authorYang, D.
dc.contributor.authorRafi, J.M.
dc.contributor.authorOhyama, H.
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-19T20:49:55Z
dc.date.available2021-10-19T20:49:55Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20035
dc.sourceIIOimport
dc.titleGermanium doping for improved silicon substrates and devices
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage8
dc.source.endpage15
dc.source.journalJournal of Crystal Growth
dc.source.issue1
dc.source.volume317
imec.availabilityPublished - open access


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