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Assymetry of the RTSs capture and emission kinetics in nMOSFETs processed in a 0.35μm CMOS technology

dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-30T09:17:23Z
dc.date.available2021-09-30T09:17:23Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2003
dc.sourceIIOimport
dc.titleAssymetry of the RTSs capture and emission kinetics in nMOSFETs processed in a 0.35μm CMOS technology
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage232
dc.source.endpage235
dc.source.conferenceNoise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference
dc.source.conferencedate14/07/1997
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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