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dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandenberghe, William
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorKao, Frank
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorZhuge, Jing
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorFischetti, Massimo
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHuang, Ru
dc.contributor.authorWang, Yangyuan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDehaene, Wim
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T21:03:40Z
dc.date.available2021-10-19T21:03:40Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20062
dc.sourceIIOimport
dc.titleTunnel field-effect transistors for low-power nano-electronics
dc.typeProceedings paper
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDehaene, Wim
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.source.peerreviewno
dc.source.conferenceTsukuba Nanotechnology Symposium - TNS
dc.source.conferencedate15/12/2011
dc.source.conferencelocationTsukuba Japan
imec.availabilityPublished - imec


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