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Ge chemical vapor deposition on GaAs for low resistivity contacts

dc.contributor.authorVincent, Benjamin
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorWang, Wei-E
dc.contributor.authorWaldron, Niamh
dc.contributor.authorFranquet, Alexis
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorBrammertz, Guy
dc.contributor.authorLoo, Roger
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T21:19:09Z
dc.date.available2021-10-19T21:19:09Z
dc.date.issued2011
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20092
dc.sourceIIOimport
dc.titleGe chemical vapor deposition on GaAs for low resistivity contacts
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH203
dc.source.endpageH207
dc.source.journalJournal of the Electrochemical Society
dc.source.issue3
dc.source.volume158
imec.availabilityPublished - open access


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