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Ge and GeSn chemical vapor deposition for Si based photonic devices

dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorVanherle, Wendy
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorVan Campenhout, Joris
dc.date.accessioned2021-10-19T21:21:31Z
dc.date.available2021-10-19T21:21:31Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20096
dc.sourceIIOimport
dc.titleGe and GeSn chemical vapor deposition for Si based photonic devices
dc.typeOral presentation
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium I: Transport and Photonics in Si-based Nanodevices
dc.source.conferencedate9/05/2011
dc.source.conferencelocationNice France
imec.availabilityPublished - imec


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