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Si passivation for Ge pMOSFETs: impact of Si cap growth conditions

dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDelmotte, Joris
dc.contributor.authorDouhard, Bastien
dc.contributor.authorValev, Ventislav
dc.contributor.authorVanbel, Maarten
dc.contributor.authorVerbiest, Thierry
dc.contributor.authorRip, Jens
dc.contributor.authorBrijs, Bert
dc.contributor.authorConard, Thierry
dc.contributor.authorClaypool, Chris
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorZaima, Shigeaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T21:22:12Z
dc.date.available2021-10-19T21:22:12Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20097
dc.sourceIIOimport
dc.titleSi passivation for Ge pMOSFETs: impact of Si cap growth conditions
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.source.peerreviewyes
dc.source.beginpage116
dc.source.endpage121
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume60
imec.availabilityPublished - imec


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