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Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

dc.contributor.authorVincent, Benjamin
dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNishimura, T.
dc.contributor.authorEneman, Geert
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorVantomme, Andre
dc.contributor.authorClarysse, Trudo
dc.contributor.authorNakatsuka, O.
dc.contributor.authorZaima, S.
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T21:22:48Z
dc.date.available2021-10-19T21:22:48Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20098
dc.sourceIIOimport
dc.titleCharacterization of GeSn materials for future Ge pMOSFETs source/drain stressors
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage342
dc.source.endpage346
dc.source.journalMicroelectronic Engineering
dc.source.issue4
dc.source.volume88
imec.availabilityPublished - open access


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