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GaN-on-Si for high-voltage applications

dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorMarcon, Denis
dc.contributor.authorGeens, Karen
dc.contributor.authorKang, Xuanwu
dc.contributor.authorVandenplas, Erwin
dc.contributor.authorViaene, John
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorSijmus, Bram
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T21:25:04Z
dc.date.available2021-10-19T21:25:04Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20102
dc.sourceIIOimport
dc.titleGaN-on-Si for high-voltage applications
dc.typeProceedings paper
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorVandenplas, Erwin
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewno
dc.source.beginpage101
dc.source.endpage112
dc.source.conferenceGallium Nitride and Silicon Carbide Power Technologies
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesECS Transactions; Vol. 41, Issue 8


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