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Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-k metal gate stacks
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Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-k metal gate stacks
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Date
2011
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20723.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vos, Ingrid
;
Hellin, David
;
Boullart, Werner
;
Vertommen, Johan
Journal
Microelectronic Engineering
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since deposited on 2021-10-19
Acq. date: 2025-12-17
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1952
since deposited on 2021-10-19
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Acq. date: 2025-12-17
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Downloads
1
since deposited on 2021-10-19
Acq. date: 2025-12-17
Views
1952
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-17
Citations