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Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-k metal gate stacks

dc.contributor.authorVos, Ingrid
dc.contributor.authorHellin, David
dc.contributor.authorBoullart, Werner
dc.contributor.authorVertommen, Johan
dc.date.accessioned2021-10-19T21:33:01Z
dc.date.available2021-10-19T21:33:01Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20118
dc.sourceIIOimport
dc.titleInterplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-k metal gate stacks
dc.typeJournal article
dc.contributor.imecauthorVos, Ingrid
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorVertommen, Johan
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage21
dc.source.endpage27
dc.source.journalMicroelectronic Engineering
dc.source.issue1
dc.source.volume88
imec.availabilityPublished - open access


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