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Growth of high quality InP layers in STI trenches on miscut Si (001) substrates

dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Maarten
dc.contributor.authorNguyen, Duy
dc.contributor.authorLoo, Roger
dc.contributor.authorBrammertz, Guy
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T21:38:43Z
dc.date.available2021-10-19T21:38:43Z
dc.date.issued2011
dc.identifier.issn0022-0248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20129
dc.sourceIIOimport
dc.titleGrowth of high quality InP layers in STI trenches on miscut Si (001) substrates
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage32
dc.source.endpage36
dc.source.journalJournal of Crystal Growth
dc.source.issue1
dc.source.volume315
imec.availabilityPublished - imec


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