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Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma

dc.contributor.authorXie, Qi
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorSchaekers, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorQu, Xin-Ping
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-19T21:55:25Z
dc.date.available2021-10-19T21:55:25Z
dc.date.issued2011
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20161
dc.sourceIIOimport
dc.titleEffective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma
dc.typeJournal article
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewyes
dc.source.beginpageG20
dc.source.endpageG22
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue5
dc.source.volume14
imec.availabilityPublished - imec


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