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GeSn technology: impact of Sn on Ge CMOS applications

dc.contributor.authorZaima, S.
dc.contributor.authorNakatsuka, O.
dc.contributor.authorShimura, Y.
dc.contributor.authorAdachi, M.
dc.contributor.authorNakamura, M.
dc.contributor.authorTakeuchi, S.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, J.
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, Andre
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T22:09:58Z
dc.date.available2021-10-19T22:09:58Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20189
dc.sourceIIOimport
dc.titleGeSn technology: impact of Sn on Ge CMOS applications
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage231
dc.source.endpage238
dc.source.conferenceULSI Process Integration 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 41, Issue 7


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