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GeSn Technology: Impact of Sn on Ge CMOS Applications

dc.contributor.authorZaima, S.
dc.contributor.authorNatasuka, O.
dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, S.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, J.
dc.contributor.authorTemst, K.
dc.contributor.authorVantomme, Andre
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-19T22:10:35Z
dc.date.available2021-10-19T22:10:35Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20190
dc.sourceIIOimport
dc.titleGeSn Technology: Impact of Sn on Ge CMOS Applications
dc.typeMeeting abstract
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2132
dc.source.conference220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access


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