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Effect of Cl in gate oxidation

dc.contributor.authorMertens, Paul
dc.contributor.authorMcGeary, M. J.
dc.contributor.authorSchaekers, Marc
dc.contributor.authorSprey, Hessel
dc.contributor.authorVermeire, Bert
dc.contributor.authorDepas, Michel
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T09:18:11Z
dc.date.available2021-09-30T09:18:11Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2021
dc.sourceIIOimport
dc.titleEffect of Cl in gate oxidation
dc.typeProceedings paper
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorSprey, Hessel
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage89
dc.source.endpage100
dc.source.conferenceScience and Technology of Semiconductor Surface Preparation
dc.source.conferencedate1/04/1997
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 477


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