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Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations

dc.contributor.authorZheng, X.F.
dc.contributor.authorRobinson, Colin
dc.contributor.authorZhang, W.D.
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-19T22:29:38Z
dc.date.available2021-10-19T22:29:38Z
dc.date.issued2011-05
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20227
dc.sourceIIOimport
dc.titleElectron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations
dc.typeJournal article
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1344
dc.source.endpage1351
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue5
dc.source.volume58
imec.availabilityPublished - open access


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