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High performance n-mos FinFET by damage-free, conformal extension doping

dc.contributor.authorZschaetzsch, Gerd
dc.contributor.authorSasaki, Y.
dc.contributor.authorHayashi, S.
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKambham, Ajay Kumar
dc.contributor.authorMody, J.
dc.contributor.authorDouhard, Bastien
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMizuno, B.
dc.contributor.authorOgura, M.
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-19T22:34:32Z
dc.date.available2021-10-19T22:34:32Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20236
dc.sourceIIOimport
dc.titleHigh performance n-mos FinFET by damage-free, conformal extension doping
dc.typeProceedings paper
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage841
dc.source.endpage844
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2011
dc.source.conferencelocationWashington, DC USA
imec.availabilityPublished - open access


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