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Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorChou, H.Y.
dc.contributor.authorThoan, N.H.
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLin, Dennis
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-20T10:01:02Z
dc.date.available2021-10-20T10:01:02Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20265
dc.sourceIIOimport
dc.titleCharge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewyes
dc.source.beginpage202104
dc.source.journalApplied Physics Letters
dc.source.issue20
dc.source.volume100
dc.identifier.urlhttp://dx.doi.org/10.1063/1.4710553
imec.availabilityPublished - imec


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