dc.contributor.author | Afanasiev, Valeri | |
dc.contributor.author | Chou, H.Y. | |
dc.contributor.author | Thoan, N.H. | |
dc.contributor.author | Adelmann, Christoph | |
dc.contributor.author | Lin, Dennis | |
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Stesmans, Andre | |
dc.date.accessioned | 2021-10-20T10:01:02Z | |
dc.date.available | 2021-10-20T10:01:02Z | |
dc.date.issued | 2012 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/20265 | |
dc.source | IIOimport | |
dc.title | Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As | |
dc.type | Journal article | |
dc.contributor.imecauthor | Afanasiev, Valeri | |
dc.contributor.imecauthor | Adelmann, Christoph | |
dc.contributor.imecauthor | Lin, Dennis | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Stesmans, Andre | |
dc.contributor.orcidimec | Adelmann, Christoph::0000-0002-4831-3159 | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 202104 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 20 | |
dc.source.volume | 100 | |
dc.identifier.url | http://dx.doi.org/10.1063/1.4710553 | |
imec.availability | Published - imec | |