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The influence of different stress techniques and proton radiation on GIDL in triple-gate SOI devices

dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorBordallo, C.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.date.accessioned2021-10-20T10:01:04Z
dc.date.available2021-10-20T10:01:04Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20266
dc.sourceIIOimport
dc.titleThe influence of different stress techniques and proton radiation on GIDL in triple-gate SOI devices
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage51
dc.source.endpage52
dc.source.conference8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI
dc.source.conferencedate24/01/2012
dc.source.conferencelocationMontpellier France
imec.availabilityPublished - open access


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