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Gateless 1T-DRAM on n-channel bulk FinFETs

dc.contributor.authorAndrade, Maria G.
dc.contributor.authorAlmeida, Luciano M.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T10:01:39Z
dc.date.available2021-10-20T10:01:39Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20286
dc.sourceIIOimport
dc.titleGateless 1T-DRAM on n-channel bulk FinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3
dc.source.endpage8
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate18/03/2012
dc.source.conferencelocationShanghai China
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 44, Issue 1


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