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Phosphorous doped (110) homoepitaxial diamond films: infuence of the substrate miscut angle on growth and electrical transport

dc.contributor.authorBalasubramanian, Y.
dc.contributor.authorRobaeys, P.
dc.contributor.authorJanssens, S.D.
dc.contributor.authorD'Haen, Jan
dc.contributor.authorHaenen, Ken
dc.date.accessioned2021-10-20T10:04:33Z
dc.date.available2021-10-20T10:04:33Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20341
dc.sourceIIOimport
dc.titlePhosphorous doped (110) homoepitaxial diamond films: infuence of the substrate miscut angle on growth and electrical transport
dc.typeOral presentation
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.source.peerreviewno
dc.source.conference23rd International Conference on Diamond and Carbon Materials
dc.source.conferencedate3/09/2012
dc.source.conferencelocationGranada Spain
imec.availabilityPublished - imec


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