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Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

dc.contributor.authorBenbakhti, B.
dc.contributor.authorZhang, J.F.
dc.contributor.authorLi, Z.
dc.contributor.authorZhang, W
dc.contributor.authorMitard, Jerome
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHall, S.
dc.contributor.authorRobertson, J.
dc.contributor.authorChalker, P.
dc.date.accessioned2021-10-20T10:05:12Z
dc.date.available2021-10-20T10:05:12Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20350
dc.sourceIIOimport
dc.titleCharacterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1681
dc.source.endpage1683
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume33
imec.availabilityPublished - open access


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