Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

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Authors

Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P.

ISSN

0741-3106

Issue

12

Journal

IEEE Electron Device Letters

Volume

33

Title

Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack

Publication type

Journal article

Embargo date

9999-12-31

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