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Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Publication:
Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Date
2012
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Benbakhti, B.
;
Zhang, J.F.
;
Li, Z.
;
Zhang, W
;
Mitard, Jerome
;
Kaczer, Ben
;
Groeseneken, Guido
;
Hall, S.
;
Robertson, J.
;
Chalker, P.
Journal
IEEE Electron Device Letters
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1860
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations
Metrics
Views
1860
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations