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Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET

dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorMartinez, Antonio
dc.contributor.authorKalna, Karol
dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-20T10:05:17Z
dc.date.available2021-10-20T10:05:17Z
dc.date.issued2012
dc.identifier.issn1536-125X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20351
dc.sourceIIOimport
dc.titleSimulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
dc.typeJournal article
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage808
dc.source.endpage817
dc.source.journalIEEE Transactions on Nanotechnology
dc.source.issue4
dc.source.volume11
dc.identifier.urlhttp://dx.doi.org/10.1109/TNANO.2012.2199514
imec.availabilityPublished - open access


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