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Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
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Authors
Benbakhti, Brahim
;
Martinez, Antonio
;
Kalna, Karol
;
Hellings, Geert
;
Eneman, Geert
;
De Meyer, Kristin
;
Meuris, Marc
ISSN
1536-125X
Issue
4
Journal
IEEE Transactions on Nanotechnology
Volume
11
Title
Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
Publication type
Journal article
Embargo date
9999-12-31
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