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Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
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Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Benbakhti, Brahim
;
Martinez, Antonio
;
Kalna, Karol
;
Hellings, Geert
;
Eneman, Geert
;
De Meyer, Kristin
;
Meuris, Marc
Journal
IEEE Transactions on Nanotechnology
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1886
since deposited on 2021-10-20
Acq. date: 2025-12-12
Citations
Metrics
Views
1886
since deposited on 2021-10-20
Acq. date: 2025-12-12
Citations