Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET

dc.contributor.author	Benbakhti, Brahim
dc.contributor.author	Martinez, Antonio
dc.contributor.author	Kalna, Karol
dc.contributor.author	Hellings, Geert
dc.contributor.author	Eneman, Geert
dc.contributor.author	De Meyer, Kristin
dc.contributor.author	Meuris, Marc
dc.contributor.imecauthor	Hellings, Geert
dc.contributor.imecauthor	Eneman, Geert
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.imecauthor	Meuris, Marc
dc.contributor.orcidimec	Hellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimec	Eneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimec	Meuris, Marc::0000-0002-9580-6810
dc.date.accessioned	2021-10-20T10:05:17Z
dc.date.available	2021-10-20T10:05:17Z
dc.date.embargo	9999-12-31
dc.date.issued	2012
dc.identifier.issn	1536-125X
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20351
dc.identifier.url	http://dx.doi.org/10.1109/TNANO.2012.2199514
dc.source.beginpage	808
dc.source.endpage	817
dc.source.issue	4
dc.source.journal	IEEE Transactions on Nanotechnology
dc.source.volume	11
dc.title	Simulation study of performance for a 20 nm gate length In0.53Ga0.47As implant free quantum well MOSFET
dc.type	Journal article
dspace.entity.type	Publication
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