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Heteroepitaxy of III-V compound semiconductors on Si for logic applications: Selective area epitaxy in shallow trench isolation structures vs direct epitaxy mediated by strain relaxed buffers
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1919 since deposited on 2021-10-20
Acq. date: 2026-01-07
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Views
1919 since deposited on 2021-10-20
Acq. date: 2026-01-07
Citations