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Towards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy

dc.contributor.authorCantoro, Mirco
dc.contributor.authorMerckling, Clement
dc.contributor.authorJiang, Sijia
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBender, Hugo
dc.contributor.authorMoussa, Alain
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T10:11:29Z
dc.date.available2021-10-20T10:11:29Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20415
dc.sourceIIOimport
dc.titleTowards the monolithic integration of III-V compound semiconductors on Si: selective area growth in high aspect ratio structures vs. strain relaxed buffer-mediated epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage4
dc.source.conferenceIEEE Compound Semiconductor Integrated Circuit Symposium - CSICS
dc.source.conferencedate14/10/2012
dc.source.conferencelocationLa Jolla, CA USA
imec.availabilityPublished - open access


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