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ESD protection devices placed inside keep-out zone (KOZ) of through silicon via (TSV) in 3D stacked integrated circuits

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorThijs, Steven
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorHellings, Geert
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T10:14:50Z
dc.date.available2021-10-20T10:14:50Z
dc.date.issued2012-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20442
dc.sourceIIOimport
dc.titleESD protection devices placed inside keep-out zone (KOZ) of through silicon via (TSV) in 3D stacked integrated circuits
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.source.peerreviewyes
dc.source.conferenceEOS/ESD Symposium
dc.source.conferencedate9/09/2012
dc.source.conferencelocationTucson, AZ USA
imec.availabilityPublished - imec


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