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Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device

dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorSwerts, Johan
dc.contributor.authorToeller, Michael
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-20T10:15:11Z
dc.date.available2021-10-20T10:15:11Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20444
dc.sourceIIOimport
dc.titleHydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
dc.typeJournal article
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage483
dc.source.endpage485
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume33
imec.availabilityPublished - open access


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