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Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
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Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Chen, Yangyin
;
Goux, Ludovic
;
Swerts, Johan
;
Toeller, Michael
;
Adelmann, Christoph
;
Kittl, Jorge
;
Jurczak, Gosia
;
Groeseneken, Guido
;
Wouters, Dirk
Journal
IEEE Electron Device Letters
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1940
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Acq. date: 2025-12-11
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Views
1940
since deposited on 2021-10-20
1
last month
Acq. date: 2025-12-11
Citations