Publication:

Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device

Date

2012
Journal article
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dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorSwerts, Johan
dc.contributor.authorToeller, Michael
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorKittl, Jorge
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.accessioned2021-10-20T10:15:11Z
dc.date.available2021-10-20T10:15:11Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20444
dc.source.beginpage483
dc.source.endpage485
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume33
dc.title

Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device

dc.typeJournal article
dspace.entity.typePublication
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