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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

dc.contributor.authorDelabie, Annelies
dc.contributor.authorSioncke, Sonja
dc.contributor.authorRip, Jens
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorMueller, Matthias
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.authorPierloot, Kristine
dc.date.accessioned2021-10-20T10:38:37Z
dc.date.available2021-10-20T10:38:37Z
dc.date.issued2012
dc.identifier.issn0734-2101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20582
dc.sourceIIOimport
dc.titleReaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates
dc.typeJournal article
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage01A127
dc.source.journalJournal of Vacuum Science and Technology A
dc.source.issue1
dc.source.volume30
imec.availabilityPublished - imec


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