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An extended "Y function" method for saturation regime characterization: application to bulk Si and Ge technologies

dc.contributor.authorDiouf, C.
dc.contributor.authorCros, A.
dc.contributor.authorMonfray, S.
dc.contributor.authorMitard, Jerome
dc.contributor.authorRosa, J.
dc.contributor.authorGloria, D.
dc.contributor.authorGhibaudo, G.
dc.date.accessioned2021-10-20T10:45:26Z
dc.date.available2021-10-20T10:45:26Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20614
dc.sourceIIOimport
dc.titleAn extended "Y function" method for saturation regime characterization: application to bulk Si and Ge technologies
dc.typeProceedings paper
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate25/09/2012
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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