Show simple item record

Two-dimensional carrier mapping at the nanometerscale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

dc.contributor.authorEyben, Pierre
dc.contributor.authorClarysse, Trudo
dc.contributor.authorMody, Jay
dc.contributor.authorNazir, Aftab
dc.contributor.authorSchulze, Andreas
dc.contributor.authorHantschel, Thomas
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T10:57:22Z
dc.date.available2021-10-20T10:57:22Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20665
dc.sourceIIOimport
dc.titleTwo-dimensional carrier mapping at the nanometerscale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy
dc.typeJournal article
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorNazir, Aftab
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.source.peerreviewyes
dc.source.beginpage69
dc.source.endpage73
dc.source.journalSolid-State Electronics
dc.source.volume71
dc.identifier.urlhttp://dx.doi.org/10.1016/j.sse.2011.10.023
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record