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Simulation of the anneal of ion implanted boron emitter and the impact on the saturation current density

dc.contributor.authorFlorakis, Antonios
dc.contributor.authorJanssens, Tom
dc.contributor.authorRosseel, Erik
dc.contributor.authorDouhard, Bastien
dc.contributor.authorDelmotte, Joris
dc.contributor.authorCornagliotti, Emanuele
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-20T11:02:03Z
dc.date.available2021-10-20T11:02:03Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20684
dc.sourceIIOimport
dc.titleSimulation of the anneal of ion implanted boron emitter and the impact on the saturation current density
dc.typeProceedings paper
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorCornagliotti, Emanuele
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage240
dc.source.endpage246
dc.source.conference2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV
dc.source.conferencedate3/05/2012
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec
imec.internalnotesEnergy Procedia; Vol. 27


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