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Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs

dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorBukhori, Muhammad Faiz
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGrasser, Tibor
dc.contributor.authorAsenov, Asen
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T11:04:06Z
dc.date.available2021-10-20T11:04:06Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20691
dc.sourceIIOimport
dc.titleImpact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage779
dc.source.endpage781
dc.source.journalIEEE Electron Device Letters
dc.source.issue6
dc.source.volume33
imec.availabilityPublished - open access


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