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GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

dc.contributor.authorGaleti, M.
dc.contributor.authorRodrigues, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-20T11:06:56Z
dc.date.available2021-10-20T11:06:56Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20702
dc.sourceIIOimport
dc.titleGIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage44
dc.source.endpage49
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume70
imec.availabilityPublished - open access


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