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Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6

dc.contributor.authorGencarelli, Federica
dc.contributor.authorVincent, Benjamin
dc.contributor.authorSouriau, Laurent
dc.contributor.authorRichard, Olivier
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-20T11:10:20Z
dc.date.available2021-10-20T11:10:20Z
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20715
dc.sourceIIOimport
dc.titleLow-temperature Ge and GeSn chemical vapor deposition using Ge2H6
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3211
dc.source.endpage3215
dc.source.journalThin Solid Films
dc.source.issue8
dc.source.volume520
dc.identifier.urlhttp://dx.doi.org/10.1016/j.tsf.2011.10.119
imec.availabilityPublished - open access


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