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Proton irradiation induced lattice defects in Si diodes and their effects on device performance

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorTakami, Y.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorSunaga, H.
dc.contributor.authorKobayashi, K.
dc.date.accessioned2021-09-30T09:22:37Z
dc.date.available2021-09-30T09:22:37Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2071
dc.sourceIIOimport
dc.titleProton irradiation induced lattice defects in Si diodes and their effects on device performance
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage143
dc.source.endpage150
dc.source.conferenceCrystalline Defects and Contamination Control: Their Impact and Control in Device Manufacturing II
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesECS Proceedings; Vol. 97-22


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