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Effect of an in-situ H2 plasma pretreatment on the minority carrier lifetime of a-Si:H(i) passivated crystalline silicon

dc.contributor.authorGranata, Stefano
dc.contributor.authorBearda, Twan
dc.contributor.authorDross, Frederic
dc.contributor.authorGordon, Ivan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-20T11:19:15Z
dc.date.available2021-10-20T11:19:15Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20749
dc.sourceIIOimport
dc.titleEffect of an in-situ H2 plasma pretreatment on the minority carrier lifetime of a-Si:H(i) passivated crystalline silicon
dc.typeProceedings paper
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage412
dc.source.endpage418
dc.source.conference2nd International Conference on Crystalline Silicon Photovoltaics - Silicon PV
dc.source.conferencedate3/04/2012
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec
imec.internalnotesEnergy Procedia; Vol. 27


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