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GeSn channel nMOSFETs: material potential and technological outlook

dc.contributor.authorGupta, Somya
dc.contributor.authorVincent, Benjamin
dc.contributor.authorLin, Dennis
dc.contributor.authorGunji, M.
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorGencarelli, Federica
dc.contributor.authorMagyari-Kope, B.
dc.contributor.authorYang, B.
dc.contributor.authorDouhard, Bastien
dc.contributor.authorDelmotte, Joris
dc.contributor.authorFranquet, Alexis
dc.contributor.authorCaymax, Matty
dc.contributor.authorDekoster, Johan
dc.contributor.authorNishi, Y.
dc.contributor.authorSaraswat, K.C.
dc.date.accessioned2021-10-20T11:24:04Z
dc.date.available2021-10-20T11:24:04Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20765
dc.sourceIIOimport
dc.titleGeSn channel nMOSFETs: material potential and technological outlook
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDekoster, Johan
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage95
dc.source.endpage96
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate12/06/2012
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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