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Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method

dc.contributor.authorGupta, Somya
dc.contributor.authorVincent, Benjamin
dc.contributor.authorYang, B.
dc.contributor.authorLin, Dennis
dc.contributor.authorGencarelli, Federica
dc.contributor.authorLin, J.-Y. J.
dc.contributor.authorChen, R.
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorMagyari-Koepe, B.
dc.contributor.authorCaymax, Matty
dc.contributor.authorDekoster, Johan
dc.contributor.authorNishi, Y.
dc.contributor.authorSaraswat, K. C.
dc.date.accessioned2021-10-20T11:24:23Z
dc.date.available2021-10-20T11:24:23Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20766
dc.sourceIIOimport
dc.titleTowards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method
dc.typeProceedings paper
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDekoster, Johan
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage16.2
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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