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ESD characterization of hgh mobility SiGe quantum well and Ge devices for future CMOS scaling

dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T11:33:01Z
dc.date.available2021-10-20T11:33:01Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20797
dc.sourceIIOimport
dc.titleESD characterization of hgh mobility SiGe quantum well and Ge devices for future CMOS scaling
dc.typeProceedings paper
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.source.peerreviewyes
dc.source.conferenceEOS ESD Symposium
dc.source.conferencedate11/09/2012
dc.source.conferencelocationTuscon, AZ USA
imec.availabilityPublished - imec


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