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High Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVanherle, Wendy
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDekoster, Johan
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-20T11:37:52Z
dc.date.available2021-10-20T11:37:52Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20814
dc.sourceIIOimport
dc.titleHigh Ge content SiGe selective processes for manufacturing source/drain in the next generations of pMOS transistors
dc.typeMeeting abstract
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage3204
dc.source.conference222nd ECS Fall Meeting
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.identifier.urlhttp://www.electrochem.org/meetings/biannual/222/download_abstracts/
imec.availabilityPublished - imec
imec.internalnotesECS Meeting Abstracts; Vol. 2012-02


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